Resistive Switching in Memristor Devices - Marcelo Rozenberg

Simulation of the resistive switching model introduced by Rozenberg, Sánchez, Weht, Acha, Gomez-Marlasca, and Levy. The model describes the conduction along a 1D resistive network path, having two memristive interfaces at either end. The upper panel shows the density of oxygen vacancies along the 1D path, the lower panel shows the two-terminal resistance across the system. If the resitivity parameters A at either end are large, the R vs V curve shows the phenomenon of "table-with-legs" (Fig. 8) that results from the two memristive interfaces. If the parameter A is large in only one interface (single memristor), the R vs V curve is a simple high-R to low-R loop.

Instructions for using applet

Before pressing start, adjust the default constant values described below:

• # Cells - changes the total number of cells used in the simulation
• Tau - changes the period of each voltage oscillation cycle used
• # Bulk Cells - changes the number of cells within the right and left bulk regions
• Bulk Resistances – changes the contact resistance of the right and left bulks, and the resistance of the center cells
• V(max) – adjusts the amplitude of the voltage oscillation cycles

After pressing start, the simulation will begin and the following controls can be adjusted:

• Change voltage oscillation - gives the option of having either a sinusoidal or triangular voltage cycle
• Delay - changes the plotting speed of the graphs (change to 0 for fastest plot speed)
• Clear - clears the Voltage vs. total resistance graph of all past data

Created by Nauman Javed with the help of Eric Pelz and Professors Marcelo Rozenberg and Vladimir Dobrosavljevic at the National Magnetic Field Laboratory at the Florida State University.